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Chih-Hung Lin

USPTO Granted Patents = 17 (Patent Applications = 1)

Average Co-Inventor Count = 1.4

ph-index = 8

Forward Citations = 122(Granted Patents)

Location History:

Changhua County, TW (2010)
Taichung, TW (2013 - 2023)
Hsinchu County, TW (2020 - 2024)

Company Filing History:

6 out of 1,096

Vanguard International Semiconductor Corporation

where one patent can have more than one assignee

Years Active: 2010-2024

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11942542 - Semiconductor device and fabrication method thereof (2024-03-26),

2. 11677002 - Semiconductor structure (2023-06-13),

3. 11158723 - Semiconductor structure and method of forming the same (2021-10-26),

4. D924658 - Tool handle (2021-07-13),

5. D919403 - Tool handle (2021-05-18),

6. D910408 - Tool handle (2021-02-16),

7. 10658228 - Semiconductor substrate structure and semiconductor device and methods for forming the same (2020-05-19),

8. 10600919 - Semiconductor structure and method for forming the same (2020-03-24),

9. 10598776 - Method for determining sampling phase of sampling clock signal and associated electronic device (2020-03-24),

10. 9614078 - Metal-oxide field effect transistor having an oxide region within a lightly doped drain region (2017-04-04),

11. D729024 - Tool handle (2015-05-12),

12. D722847 - Tool handle (2015-02-24),

13. D722770 - Tool box (2015-02-24),

14. D720540 - Tool holder (2015-01-06),

15. D691802 - Tool box (2013-10-22),

Title: Chih-Hung Lin: Innovator in Semiconductor Technology

Introduction

Chih-Hung Lin is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on innovative semiconductor devices and fabrication methods that enhance performance and efficiency.

Latest Patents

Among his latest patents is a semiconductor device and fabrication method that includes a substrate, a gate dielectric layer, a gate electrode, a field plate, a source electrode, and a drain electrode. This invention features a gate dielectric layer with varying thicknesses, optimizing the device's functionality. Another notable patent is a semiconductor structure that comprises a substrate, a channel layer, a barrier layer, and a doped compound semiconductor layer. This structure is designed to improve the performance of semiconductor devices by incorporating advanced materials and configurations.

Career Highlights

Chih-Hung Lin has worked with leading companies in the semiconductor industry, including Vanguard International Semiconductor Corporation and MediaTek Corporation. His experience in these organizations has allowed him to develop cutting-edge technologies that push the boundaries of semiconductor applications.

Collaborations

Throughout his career, Chih-Hung Lin has collaborated with talented individuals such as Chia-Hao Lee and Yih-Ming Tsuie. These partnerships have fostered innovation and contributed to the advancement of semiconductor technology.

Conclusion

Chih-Hung Lin's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices, paving the way for future innovations.

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