The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Oct. 03, 2018
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Chih-Hung Lin, Taichung, TW;
Chia-Hao Lee, New Taipei, TW;
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02164 (2013.01); H01L 21/02502 (2013.01); H01L 21/76264 (2013.01); H01L 29/4908 (2013.01); H01L 29/78618 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a first oxide layer disposed over the substrate, a second oxide layer, and a semiconductor layer disposed over the second oxide layer. The second oxide layer is disposed at one side of the first oxide layer and is in contact with the first oxide layer. The second oxide layer partially overlaps the first oxide layer, and the first oxide layer and the second oxide layer include the same oxide.