The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Jul. 11, 2018
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Chih-Hung Lin, Taichung, TW;

Chia-Hao Lee, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76278 (2013.01); H01L 21/02554 (2013.01); H01L 21/823493 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, an oxide layer disposed over the substrate, and a first epitaxial layer disposed over the oxide layer. The first epitaxial layer has the first conductivity type. The semiconductor device also includes a second epitaxial layer disposed over the first epitaxial layer and a third epitaxial layer disposed over the second epitaxial layer. The second epitaxial layer has a second conductivity type that is opposite to the first conductivity type. The third epitaxial layer has the first conductivity type.


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