Hsinchu, Taiwan

Chiao-Shun Chuang

This inventor holds 28 USPTO granted patents and 16 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Diodes Inc., Mosel Vitelic Corporation, Au Optronics Corporation. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chiao-Shun Chuang. Retrieved from https://idiyas.com/inventor/chiao-shun-chuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 96.4

 

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 86(Granted Patents)


Location History:

  • Hsinchu, TW (2003 - 2014)
  • Zhubei, TW (2017 - 2023)
  • Kaohsiung, TW (2004 - 2024)

Company Filing History:


Years Active: 2003-2026

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Areas of Expertise:
Gate Drive Apparatus
Vertical Power Semiconductor
Trench MOSFET
DMOS Device
Termination Structure
Thin Film Transistor
Schottky Diode
Self-Aligned Dual Trench
Semiconductor Structures
Manufacturing Methods
Edge Support
Highly Dielectric Layer
28 patents (USPTO):Explore Patents

Title: Chiao-Shun Chuang: Innovator and Inventor Extraordinaire

Introduction:

Chiao-Shun Chuang, hailing from Hsinchu, Taiwan, is a highly talented individual with a passion for innovation and invention. With a remarkable portfolio of 21 patents to his name, Chuang has made significant contributions to the field of gate drive apparatus control methods and split-gate trench MOSFET technology. This article will delve into some of his latest patents, career highlights, collaborations, and overall impact.

Latest Patents:

Chuang's recent patent titled "Gate drive apparatus control method" showcases his expertise in developing an apparatus that efficiently provides bias power for a high-side switch. By utilizing a capacitive device and a gate drive path with variable resistance, Chuang's invention enables optimized performance during both turn-on and turn-off states of the high-side switch. This innovative design ensures enhanced control, durability, and energy efficiency.

Another notable patent from Chuang is the "Split-gate trench MOSFET." This invention demonstrates his adeptness at developing advanced semiconductor devices. By employing active and termination trenches, Chuang's design achieves improved gate electrode contact and reduces leakage current, thereby enhancing device performance and reliability.

Career Highlights:

Chuang's impressive career spans several renowned companies, where his remarkable talent and dedication shine through. He has contributed significantly to the field of innovation during his tenure at Diodes Inc. and Mosel Vitelic Corporation. These esteemed organizations have recognized Chuang's inventive abilities, making him an invaluable asset in advancing their technologies.

Collaborations:

Throughout his career, Chuang has had the privilege of working alongside esteemed colleagues who share his passion for innovation. Notably, he has collaborated with industry experts such as Mao-Song Tseng and Chien-Ping Chang. These collaborations have undoubtedly fostered knowledge exchange, paving the way for groundbreaking advancements in semiconductor technology.

Conclusion:

Chiao-Shun Chuang, with his extensive patent portfolio and remarkable inventions, has established himself as a leading innovator in the field of semiconductor technology. His groundbreaking work in developing gate drive apparatus control methods and split-gate trench MOSFET technology has paved the way for more efficient, reliable, and advanced electronic devices. Chuang's contributions highlight the significance of continuous innovation and push the boundaries of technological possibilities. The world eagerly awaits future inventions from this visionary innovator, with the expectation of even greater advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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