Hsinchu, Taiwan

Chia-Tze Huang

This inventor holds 5 USPTO granted patents. Top assignees: Macronix International Co., Ltd., Macronix International. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chia-Tze Huang. Retrieved from https://idiyas.com/inventor/chia-tze-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 80.0

Average Co-Inventor Count = 1.2

ph-index = 1


Company Filing History:


Years Active: 2024-2026

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5 patents (USPTO):Explore Patents

Title: Innovations of Chia-Tze Huang in Memory Device Technology

Introduction

Chia-Tze Huang is a prominent inventor based in Hsing-Chu, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of four patents. His work focuses on advanced memory devices that enhance performance and efficiency in data storage.

Latest Patents

One of his latest patents is titled "Memory device with insulating pillar in staircase region and method of forming the same." This invention pertains to a memory device applicable to 3D NAND flash memory. The device comprises a substrate, a first stacked structure, a second stacked structure, a channel structure, an insulating pillar, a through via, and a conductive layer. The substrate features a memory array region and a staircase region, with the first stacked structure located in the memory array region and the second stacked structure in the staircase region. The channel structure penetrates through the first stacked structure, while the insulating pillar penetrates through the second stacked structure. The through via extends through the insulating pillar, and the conductive layer surrounds the sidewall of the insulating pillar.

Another notable patent is "Memory device and method of fabricating the same." This invention includes a gate stack structure, a channel pillar, a plurality of conductive pillars, and a charge storage structure. The gate stack structure is situated over a dielectric substrate and consists of multiple gate layers and insulating layers stacked alternately. The channel pillar extends through the gate stack structure, and each conductive pillar features a body portion that connects electrically to the channel pillar, along with an extension portion that is isolated from it. The charge storage structure is positioned between the channel pillar and the gate layers.

Career Highlights

Chia-Tze Huang is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His expertise and inventions have contributed to advancements in data storage solutions.

Collaborations

He has collaborated with notable coworkers, including Min-Feng Hung and Li-Yen Liang, who share his commitment to innovation in memory devices.

Conclusion

Chia-Tze Huang's contributions to memory device technology exemplify the impact of innovative thinking in the field. His patents reflect a dedication to enhancing data storage capabilities, making him a significant figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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