The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Apr. 14, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Chia-Tze Huang, Hsing-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02);
Abstract

A memory device includes a gate stack structure, a channel pillar, a plurality of conductive pillars, and a charge storage structure. The gate stack structure is located over a dielectric substrate, and includes a plurality of gate layers and a plurality of insulating layers stacked alternately with each other. The channel pillar extends through the gate stack structure. Each of the conductive pillars includes a body portion and an extension portion. The body portion extends through the gate stack structure and is electrically connected to the channel pillar. The extension portion is below and is electrically isolated from the channel pillar. The charge storage structure is between the channel pillar and the plurality of gate layers.


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Quick Actions:

Huang, Chia-Tze. (2025). Memory device and method of fabricating the same (U.S. Patent No. 12268000). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12268000

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