Chi-Tse Lee

Title: Innovations of Chi-Tse Lee

Introduction

Chi-Tse Lee is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of epitaxy substrates. With a total of 2 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

Chi-Tse Lee's latest patents include a method of manufacturing an epitaxy substrate. This method involves providing a handle substrate and performing a beveling treatment on the edge of a device substrate. The device substrate has a thickness greater than 100 µm and less than 200 µm. An ion implantation process is conducted on the first surface of the device substrate to create an implantation region. The second surface of the device substrate is then bonded to the handle substrate, ensuring a bonding angle greater than 90° between the bevel of the device substrate and the handle substrate. The projection length of the bevel toward the handle substrate is maintained between 600 µm and 800 µm. Another patent focuses on the epitaxy substrate itself, which includes a device substrate and a handle substrate, with specific oxygen content requirements and bonding angles.

Career Highlights

Chi-Tse Lee is currently employed at GlobalWafers Co., Ltd., where he continues to innovate in the semiconductor field. His expertise in epitaxy substrate manufacturing has positioned him as a key player in the industry.

Collaborations

Chi-Tse Lee has collaborated with notable coworkers such as Ying-Ru Shih and Chih-Yuan Chuang. Their combined efforts contribute to the advancement of technology in their field.

Conclusion

Chi-Tse Lee's contributions to the semiconductor industry through his innovative patents and collaborations highlight his importance as an inventor. His work continues to influence the development of advanced manufacturing techniques.