Globalwafers Co., Ltd.

Chi-Tse Lee

Wen-Ching Hsu

Ying-Ru Shih

Chih-Yuan Chuang

Chun-I Fan

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 &#x3bc;m and less than 200 &#x3bc;m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90&#xb0; is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 &#x3bc;m and 800 &#x3bc;m.

Method of manufacturing epitaxy substrate

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90&#xb0; is between the bevel of the device substrate and the handle substrate.

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Hsinchu, Taiwan

Chi-Tse Lee