Chi Huang

Title: Chi Huang - Innovator in Semiconductor Technology

Introduction

Chi Huang is an inventor based in Changhua County, Taiwan. He is known for his contributions to semiconductor technology, particularly in the development of structures and methods for manufacturing semiconductor devices. Although he currently holds no granted patents, his innovative ideas are reflected in his patent applications.

Latest Patent Applications

Chi Huang's notable patent application is titled "Semiconductor Structure with Treated Gate Dielectric Layer and Method for Manufacturing the Same." This application outlines a method that includes forming a first channel structure and a second channel structure. It also describes the formation of a first type of source/drain structures attached to opposite sides of the first channel structure and a second type of source/drain structures attached to opposite sides of the second channel structure. The method further details the formation of a first gate dielectric layer, which has a first portion covering the first channel structure and a second portion covering the second channel structure. Additionally, it involves driving a first metal element into the first portion of the first gate dielectric layer and forming a cap layer over both portions of the first gate dielectric layer. An annealing process is then performed on the first gate dielectric layer under the cap layer.

Conclusion

Chi Huang's work in semiconductor technology showcases his innovative approach to manufacturing processes. His patent application reflects a significant contribution to the field, even in the absence of granted patents. The advancements he proposes could potentially influence future developments in semiconductor structures.