The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jan. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ta-Chun Lin, Hsinchu, TW;
Yi-Hsien Chen, Hsinchu County, TW;
Chi Huang, Changhua County, TW;
Chih-Pin Tsao, Hsinchu County, TW;
Chun-Sheng Liang, Changhua County, TW;
Chih-Hao Chang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes the following steps. A substrate is patterned to form a fin structure. The fin structure is recessed to form a recess in the fin structure. An epitaxial source/drain region is grown from the recess. A first silicide layer is formed on the epitaxial source/drain region. A first portion of the first silicide layer is thinned, while leaving a second portion of the first silicide layer un-thinned. A metal contact is formed in contact with the thinned first portion of the first silicide layer.