Chi-Heng Lin

Title: Innovations of Chi-Heng Lin in Semiconductor Technology

Introduction

Chi-Heng Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for fabricating semiconductor devices, which are crucial for modern electronics.

Latest Patents

Chi-Heng Lin's latest patents include a method for fabricating a semiconductor device. This method involves several steps, including the formation of a first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor on a substrate. Following this, a first stress-inducing dielectric layer and a first capping layer are sequentially formed on the first transistor, while a second stress-inducing dielectric layer and a second capping layer are formed on the second transistor. The process concludes with the removal of the first capping layer. Another notable patent is a semiconductor process that includes the formation of a polysilicon layer on a substrate, followed by an asymmetric dual-side heating treatment, where the power for front-side heating differs from that for backside heating.

Career Highlights

Chi-Heng Lin is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further develop his innovative ideas and contribute to advancements in semiconductor technology.

Collaborations

Chi-Heng Lin has collaborated with notable coworkers, including An-Chi Liu and Chih-Wen Teng. These collaborations have fostered a creative environment that enhances the development of new technologies.

Conclusion

Chi-Heng Lin's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of electronics.