The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 05, 2012
An-chi Liu, Tainan, TW;
Chih-wen Teng, Chiayi County, TW;
Tzu-yu Tseng, Tainan, TW;
Chi-heng Lin, Hsinchu, TW;
An-Chi Liu, Tainan, TW;
Chih-Wen Teng, Chiayi County, TW;
Tzu-Yu Tseng, Tainan, TW;
Chi-Heng Lin, Hsinchu, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.