United Microelectronics Corp.

Chi-Heng Lin

Chan-Lon Yang

An-Chi Liu

Ching-I Li

Chun-Yao Yang

Ger-Pin Lin

Ching-Nan Hwang

Tzu-Yu Tseng

Chih-Wen Teng

A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

Method for fabricating semiconductor device

A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.

Semiconductor process

Growing community of inventors

Hsinchu, Taiwan

Chi-Heng Lin