Hsin-Chu, Taiwan

Cheng-Te Chang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015-2018

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3 patents (USPTO):Explore Patents

Title: Innovator Cheng-Te Chang: Pioneering Multi-Terminal MOS Device Modeling

Introduction

Cheng-Te Chang, an accomplished inventor based in Hsin-Chu, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of three patents to his name, Chang is recognized for his innovative work, particularly in the area of multi-terminal Metal Oxide Semiconductor (MOS) devices.

Latest Patents

Among Cheng-Te Chang's latest inventions is a groundbreaking methodology for modeling multi-terminal MOS devices, aimed at enhancing layout verification systems (LVS) and process design kits (PDK). This inventive method involves identifying a semiconductor device layout region that comprises a first n-type MOS device with a pair of face-to-face diodes, adjacent to a second n-type MOS device displaying similar configurations. A distinguishing feature of this patent is the addition of a dummy device between the first and second body contacts of the respective MOS devices, optimizing their operational integrity and performance.

Career Highlights

Cheng-Te Chang's professional journey is closely tied with Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), where he has applied his expertise to further advancements in semiconductor manufacturing techniques. Through this role, he has not only contributed to cutting-edge innovations but has also established himself as a key figure in the field.

Collaborations

Throughout his career, Cheng-Te Chang has collaborated with notable coworkers, including Chau-Wen Wei and Chin-Yuan Huang. These partnerships have facilitated a dynamic exchange of ideas, leading to the development of innovative solutions that meet the evolving demands of the semiconductor industry.

Conclusion

Cheng-Te Chang stands out as an influential inventor whose contributions to the modeling of multi-terminal MOS devices have the potential to transform semiconductor technology. As he continues to innovate and collaborate within the industry, his work is poised to make lasting impacts in the field.

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