The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Apr. 06, 2011
Chau-wen Wei, Hsin-Chu, TW;
Cheng-te Chang, Hsin-Chu, TW;
Chin-yuan Huang, Hsin-Chu, TW;
Chih Ming Yang, Hsin-Chu, TW;
Yi-kan Cheng, Taipei, TW;
Chau-Wen Wei, Hsin-Chu, TW;
Cheng-Te Chang, Hsin-Chu, TW;
Chin-yuan Huang, Hsin-Chu, TW;
Chih Ming Yang, Hsin-Chu, TW;
Yi-Kan Cheng, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.