The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Apr. 06, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Chau-Wen Wei, Hsin-Chu, TW;
Cheng-Te Chang, Hsin-Chu, TW;
Chin-Yuan Huang, Hsin-Chu, TW;
Chih Ming Yang, Hsin-Chu, TW;
Yi-Kan Cheng, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); G06F 17/50 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5081 (2013.01); G06F 17/5036 (2013.01); G06F 17/5072 (2013.01); H01L 21/823493 (2013.01); H01L 21/823892 (2013.01); H01L 27/0629 (2013.01); H01L 27/088 (2013.01); H01L 27/0207 (2013.01);
Abstract
A method comprises identifying a semiconductor device layout region comprising a first n-type metal oxide semiconductor (MOS) device having a first pair of face-to-face diodes adjacent to a second n-type MOS device having a second pair of face-to-face diodes and adding a dummy device between a first body contact of the first n-type MOS device and a second body contact of the second MOS device.