Cheng Lin Heng

Title: Innovations by Cheng Lin Heng in Nonvolatile MOS Memory Devices

Introduction

Cheng Lin Heng is a notable inventor based in Yangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of nonvolatile MOS memory devices. His innovative approach addresses critical challenges in the manufacturing process of these devices.

Latest Patents

Cheng Lin Heng holds a patent for a process to manufacture nonvolatile MOS memory devices. This patent focuses on devices with embedded silicon or germanium nanocrystals, which exhibit superior data-retention characteristics compared to conventional floating-gate devices. The prior art use of ion implantation for their manufacture introduced several problems, which Cheng has successfully overcome. His method begins with the rapid thermal oxidation to grow a high-quality layer of thin tunnel oxide. Following this, chemical vapor deposition is employed to deposit a germanium-doped oxide layer. A capping oxide is then added, and the structure undergoes rapid thermal annealing to synthesize the germanium nanocrystals.

Career Highlights

Cheng Lin Heng is associated with Chartered Semiconductor Manufacturing Ltd, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also pushed the boundaries of what is possible in memory device manufacturing.

Collaborations

Cheng has collaborated with notable colleagues such as Vincent Ho and Wee Kiong Choi. Their combined expertise has fostered an environment of innovation and excellence in their projects.

Conclusion

Cheng Lin Heng's contributions to the field of nonvolatile MOS memory devices highlight his innovative spirit and technical expertise. His patent reflects a significant advancement in semiconductor technology, paving the way for future developments in the industry.