The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Oct. 01, 2003
Vincent Ho, Singapore, SG;
Wee Kiong Choi, Singapore, SG;
Lap Chan, Singapore, SG;
Wai Kin Chim, Singapore, SG;
Vivian NG, Singapore, SG;
Cheng Lin Heng, Yangzhou, CN;
Lee Wee Teo, Singapore, SG;
Vincent Ho, Singapore, SG;
Wee Kiong Choi, Singapore, SG;
Lap Chan, Singapore, SG;
Wai Kin Chim, Singapore, SG;
Vivian Ng, Singapore, SG;
Cheng Lin Heng, Yangzhou, CN;
Lee Wee Teo, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.