Chartered Semiconductor Manufacturing Ltd (corporation)

Cheng Lin Heng

Lap Chan

Lee Wee Teo

Vincent Ho

Wai Kin Chim

Wee Kiong Choi

Vivian Ng

Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.

Growing community of inventors

Yangzhou, China

Cheng Lin Heng