Taoyuan, Taiwan

Cheng-Chun Chang


Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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5 patents (USPTO):Explore Patents

Title: Cheng-Chun Chang: Innovator in Semiconductor Technology

Introduction

Cheng-Chun Chang is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and stability of memory devices, which are crucial in modern electronics.

Latest Patents

One of Cheng-Chun Chang's latest patents is titled "Semiconductor devices with a double sided word line structure." This invention provides methods for manufacturing memory cells that feature a double sided word line structure. In this design, a first word line is positioned on one side of the memory cells, while a second word line is located on the opposite side. Another notable patent is "Memory device and manufacturing method thereof," which introduces an ovonic threshold switch (OTS) selector. This selector includes a switching layer made from a GeCTe compound, further doped with nitrogen and silicon, resulting in improved thermal stability and electrical performance.

Career Highlights

Cheng-Chun Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of advanced memory technologies.

Collaborations

Cheng-Chun Chang has collaborated with notable colleagues, including Tung-Ying Lee and Chun-Wei Hsu. Their combined expertise has contributed to the advancement of semiconductor technologies.

Conclusion

Cheng-Chun Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the development of memory devices, showcasing the importance of innovation in technology.

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