The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jul. 14, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Wei Hsu, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
Cheng-Chun Chang, Taoyuan, TW;
Yi-Sheng Lin, Taichung, TW;
Liang-Guang Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Formation methods of a semiconductor device structure are provided. The method includes providing a substrate having a low topography region and a high low topography region. The method also includes forming a first dielectric layer over the substrate. The method further includes forming a second dielectric layer over the stop layer. In addition, the method includes forming an opening in the first dielectric layer, the stop layer and the second dielectric layer. The method also includes forming a conductive material layer over the second dielectric layer. The conductive material layer fills the opening. The method further includes performing a polishing process over the conductive material layer until a top surface of the stop layer is exposed.