This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2016
Title: Chen-Chien Li and His Patent on Nitrogen-Containing Oxide Films.
Introduction
Chen-Chien Li is an inventor associated with Hsinchu, Taiwan. His patent work includes a method for forming nitrogen-containing oxide films, and he is affiliated with Taiwan Semiconductor Manufacturing Company, Ltd.
Latest Patents
Li is credited with 1 patent, titled “Nitrogen-Containing Oxide Film and Method of Forming the Same.” The patent describes forming an oxide film by exposing a substrate to alternating gas pulses containing oxygen and metal, then treating the oxide film with a nitrogen-containing plasma. The process produces a nitrogen-containing oxide film with a nitrogen concentration of about 0.1 to 3 atomic percent.
Career Highlights
Li’s disclosed invention focuses on controlling the composition of oxide films through a sequence of gas exposures and plasma treatment. This approach provides a method for incorporating a specified concentration of nitrogen into an oxide film.
Collaborations
Chen-Ming Huang and Yi Hsien Lu are identified as Li’s coworkers. The available information does not specify their roles in the patent or their contributions to the invention.
Conclusion
Chen-Chien Li’s patent documents a process for forming nitrogen-containing oxide films with a defined nitrogen concentration, reflecting his work in semiconductor-related materials and fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile