The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Mar. 01, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
An-Chun Tu, Taipei, TW;
Chih-Hong Hwang, New Taipei, TW;
Yi Hsien Lu, Yuanchang Township, TW;
Chun-Heng Chen, Hsin-Chu, TW;
Chen-Chien Li, Hsin-Chu, TW;
Chih-Jen Wu, Chu-Dong Town, TW;
Kuei-Shu Chang-Liao, Hsin-Chu, TW;
Chen-Ming Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %).