Taiwan Semiconductor Manufacturing Comp. Ltd.

Chen-Chien Li

Chen-Ming Huang

Chun-Heng Chen

Chih-Jen Wu

An-Chun Tu

Chih-Hong Hwang

Yi Hsien Lu

Kuei-Shu Chang-Liao

A method of forming a nitrogen-containing oxide film is disclosed. The method comprises (a) exposing a substrate to a first gas pulse having one of an oxygen-containing gas and a metal-containing gas; (b) exposing the substrate to a second gas pulse having the other of the oxygen-containing gas and the metal-containing gas to form an oxide film over the substrate; and (c) exposing the oxide film to a third gas pulse having a nitrogen-containing plasma to form a nitrogen-containing oxide film, wherein the nitrogen-containing oxide film has a nitrogen concentration between about 0.1 and about 3 atomic percent (at %).

Nitrogen-containing oxide film and method of forming the same

Growing community of inventors

Hsin-Chu, Taiwan

Chen-Chien Li