Company Filing History:
Years Active: 2021-2025
Title: Che-Ping Chen: Innovator in Memory Device Technology
Introduction
Che-Ping Chen is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 3 patents. His work focuses on enhancing the performance and capacity of memory systems, particularly in the realm of 3D NAND flash memory.
Latest Patents
Among his latest patents is an innovative operating method of a memory device. This method includes applying a read voltage to a selected page of multiple programmed memory pages, as well as a first pass voltage to unselected pages. Additionally, it involves applying a second pass voltage to at least one unprogrammed memory page, where the first pass voltage is greater than the second. Another notable patent involves a memory programming operation that comprises preprogramming memory cells. In this process, a memory controller receives a command to program information to a memory storage array and determines the target memory state and corresponding threshold voltage level. The controller then selects a memory location and pre-programs it by applying program pulses at respective voltage levels.
Career Highlights
Che-Ping Chen is currently employed at Macronix International Co., Ltd., where he continues to develop cutting-edge memory technologies. His expertise in memory systems has positioned him as a key player in the industry, contributing to advancements that enhance data storage solutions.
Collaborations
Throughout his career, Che-Ping Chen has collaborated with notable colleagues, including Ya-Jui Lee and Shin-Jang Shen. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the memory sector.
Conclusion
Che-Ping Chen's contributions to memory device technology exemplify his commitment to innovation and excellence. His patents reflect a deep understanding of memory systems and their operational efficiencies. His work continues to influence the future of data storage technology.