The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jul. 21, 2023
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Che-Ping Chen, Taipei City, TW;

Ya-Jui Lee, Taichung City, TW;

Yu-Hung Huang, Tainan City, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01);
Abstract

Provided are a memory device and a pre-charge method for a memory device. The pre-charge method includes: applying a plurality of independently-controlled pre-charge voltages to a plurality of turned-on word lines, wherein the plurality of pre-charge voltages are selected among a plurality of reference pre-charge voltages; and applying a plurality of turned-off voltages to a plurality of turned-off word lines. On a predetermined direction, a target turned-on word line among the plurality of turned-on word lines is adjacent to a next adjacent target turned-off word line among the plurality of turned-off word lines; and a voltage difference from the target turned-on word line toward the next adjacent target turned-off word line is smaller than a predetermined reference voltage difference.


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Chen, Che-Ping. (2026). Memory device and pre-charge method (U.S. Patent No. 12776376). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12776376

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