The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
May. 09, 2024
Macronix International Co., Ltd., Hsinchu, TW;
Yu-Hung Huang, Tainan City, TW;
Ya-Jui Lee, Taichung City, TW;
Che-Ping Chen, Taipei City, TW;
Yin-Jen Chen, Hsinchu County, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
Provided are a precharging method and a programming method for a 3D memory device that includes a top-deck word line group, a middle dummy word line group, a bottom-deck word line group, and a bottom dummy word line group. The precharging method includes: selecting a word line to be programmed; determining whether the word line is in the top- or bottom-deck word line group; applying a precharge on voltage to the middle dummy word line group to turn on a channel to precharge the channel when the word line is in the top-deck word line group; and applying a precharge off voltage to the middle dummy word line group to turn off the channel to not precharge the channel when the word line is in the bottom-deck word line group. This method is suitable for a 3D NAND flash memory having high capacity and high performance.