Yin-Jen Chen

Title: Yin-Jen Chen and 3D Memory Programming Innovations.

Introduction

Yin-Jen Chen is an inventor associated with Hsinchu County, Taiwan. His patent work concerns programming methods for three-dimensional NAND flash memory, a technology designed to support high-capacity data storage and performance.

Latest Patents

Chen is named on one patent, 1 patent: “Precharging Method and Programming Method for Selected and Unselected Sub-Blocks of 3D Memory Strings in a Device.” The invention describes a precharging approach for a 3D memory device with top-deck and bottom-deck word-line groups, as well as middle and bottom dummy word-line groups. It selects a word line for programming and determines which deck contains it. For a top-deck word line, the method applies a precharge-on voltage to the middle dummy word-line group, turning on the channel so it can be precharged. For a bottom-deck word line, it applies a precharge-off voltage, turning off the channel to prevent precharging. The approach is intended for high-capacity, high-performance 3D NAND flash memory.

Career Highlights

Chen is associated with Macronix International. His patent reflects work on controlling channel precharging during memory programming, with different operations selected according to the location of the word line.

Collaborations

Chen’s listed coworker is Yu-Hung Huang, who is a woman. The provided information does not specify her role in the patent or the nature of their collaboration.

Conclusion

Yin-Jen Chen’s patent focuses on adapting precharging behavior to the selected memory deck, contributing a targeted programming method for 3D NAND flash devices.