This inventor holds 2 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2010.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2010
Title: Innovations of Chao-Yuan Su
Introduction
Chao-Yuan Su is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of high-voltage MOS transistor devices. With a total of 2 patents, his work has advanced the technology in this area, showcasing his expertise and innovative spirit.
Latest Patents
Chao-Yuan Su's latest patents include a high-voltage MOS transistor device that features a substrate, a gate, a source, a drain, and a first ion well of a first conductive type. This device is designed to enhance the breakdown voltage through a smooth field distribution. Another notable patent is a high-voltage transistor device that incorporates an isolation structure, multiple doped regions, and a first dielectric layer, further improving the performance of high-voltage applications.
Career Highlights
Chao-Yuan Su is currently employed at United Microelectronics Corporation, where he continues to innovate and develop advanced semiconductor technologies. His work has been instrumental in pushing the boundaries of high-voltage transistor devices, making them more efficient and reliable.
Collaborations
Chao-Yuan Su has collaborated with notable colleagues such as Chih-Jen Huang and Wei-Lun Hsu. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.
Conclusion
Chao-Yuan Su's contributions to the field of high-voltage MOS transistor devices highlight his role as an influential inventor. His patents reflect a commitment to innovation and excellence in semiconductor technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile