The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Aug. 10, 2007
Shih-ming Shu, Yun-Lin County, TW;
Chih-jen Huang, Hsinchu, TW;
Tun-jen Cheng, Hsinchu, TW;
Chao-yuan Su, Hsinchu, TW;
Shih-Ming Shu, Yun-Lin County, TW;
Chih-Jen Huang, Hsinchu, TW;
Tun-Jen Cheng, Hsinchu, TW;
Chao-Yuan Su, Hsinchu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A HV MOS transistor device having a substrate, a gate, a source, a drain, a first ion well of a first conductive type disposed in the substrate, and a plurality of field plates disposed on the substrate is disclosed. The HV MOS transistor device further has a first doped region of a second conductive type positioned in the first ion well. Therefore, a first interface and a second interface between the first ion well and the first doped region are formed, and the first interface and the second interface are respectively positioned near the drain and the source. In addition, the first interface is positioned under a respective field plate to produce a smooth field distribution and to increase the breakdown voltage of the HV transistor device.