The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2010
Filed:
Aug. 10, 2007
Chao-yuan Su, Hsinchu, TW;
Wei-lun Hsu, Hsin-Chu Hsien, TW;
Ching-ming Lee, Miaoli County, TW;
Chih-jen Huang, Hsinchu, TW;
Te-yuan Wu, Hsin-Chu, TW;
Chun-hsiung Peng, Tao-Yuan, TW;
Chao-Yuan Su, Hsinchu, TW;
Wei-Lun Hsu, Hsin-Chu Hsien, TW;
Ching-Ming Lee, Miaoli County, TW;
Chih-Jen Huang, Hsinchu, TW;
Te-Yuan Wu, Hsin-Chu, TW;
Chun-Hsiung Peng, Tao-Yuan, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.