Channappa Desai

Title: Channappa Desai: Innovator in Memory Circuit Technology

Introduction

Channappa Desai is a notable inventor based in Haveri, India. He has made significant contributions to the field of memory circuit technology, holding a total of 4 patents. His work primarily focuses on advancements in static random-access memory (SRAM) array circuits.

Latest Patents

One of his latest patents involves SRAM array circuits that include bilateral well tap cells with a reduced width folded finger structure. This innovation presents an SRAM array circuit where a horizontal N-well of a well tap cell in a first row is separated from a horizontal N-well of a well tap cell in a second row by a P-type substrate region. The well tap cells feature a bilateral P-type well tap that is disposed in the P-type substrate region, providing ground voltage to the P-type substrate on both sides of a column of well tap cells. This design reduces the width of the SRAM array circuit, enhancing its efficiency. Another significant patent describes an integrated circuit (IC) that includes a first memory block, a second memory block, and a first memory border cell situated between the two memory blocks. This configuration optimizes the memory architecture by incorporating memory gap portions that enhance performance.

Career Highlights

Channappa Desai is currently employed at Qualcomm Incorporated, a leading company in the technology sector. His work at Qualcomm has allowed him to push the boundaries of memory technology and contribute to innovative solutions in the industry.

Collaborations

He has collaborated with talented coworkers such as Sunil Sharma and Anne Srikanth, who have also contributed to advancements in memory technology.

Conclusion

Channappa Desai's contributions to memory circuit technology through his patents and work at Qualcomm Incorporated highlight his role as an influential inventor in the field. His innovations continue to shape the future of memory technology.