Changyuan Chen

Title: Changyuan Chen: A Pioneer in Memory Programming Technology

Introduction: Changyuan Chen, an innovative inventor based in San Ramon, California, holds an impressive portfolio of 38 patents. His significant contributions to the field of memory programming and data retention technologies have advanced the capabilities of storage devices, providing better performance and reliability.

Latest Patents: Chen's recent patents focus on two critical areas in memory technology:

1. **Programming to Minimize Cross-Temperature Threshold Voltage Widening**: This patent introduces apparatuses and techniques designed to program memory cells while reducing the widening of threshold voltage distribution caused by temperature fluctuations. Chen’s approach involves correlating program speed with the temperature coefficient and implementing differentiated verification tests for memory cells based on their assigned data states and environmental temperature. Additionally, it includes measuring the memory cells' subthreshold slope to classify them into groups for more efficient programming.

2. **Post Write Erase Conditioning**: This patent addresses data retention challenges in charge trapping (CT) based memory. Chen proposes a method of modifying the erase state with post write erase conditioning to enhance data retention performance. By adjusting the erase distribution and increasing voltage levels, his innovation aims to reduce lateral charge movement, thereby maintaining data integrity even at elevated temperatures.

Career Highlights: Throughout his career, Changyuan Chen has showcased his expertise at renowned companies in the technology sector, including SanDisk Technologies Inc. and Silicon Storage Technology, Inc. His work has significantly influenced the design and functionality of memory devices, making them more efficient and adaptable to varying operational conditions.

Collaborations: Chen has worked alongside notable professionals in the industry, including Biswajit Ray and Mohan Dunga. Their collaborations have driven advancements in memory technologies, underlining the importance of teamwork in achieving groundbreaking innovations.

Conclusion: Changyuan Chen’s contributions to memory programming and data retention represent a remarkable blend of innovation and practical application in the tech industry. As the complexity of memory devices continues to grow, his advancements will play a crucial role in enhancing their performance and reliability, solidifying his place as a prominent inventor in this field.