The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Jun. 21, 2018
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Vinh Diep, San Jose, CA (US);
Ching Huang Lu, Fremont, CA (US);
Henry Chin, Fremont, CA (US);
Changyuan Chen, San Ramon, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); H01L 27/1157 (2017.01); H01L 29/423 (2006.01); H01L 27/11573 (2017.01); H01L 29/792 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/42344 (2013.01); H01L 29/7926 (2013.01);
Abstract
Systems, methods, and devices of the various embodiments provide both 'string-sharing' drain select gate electrodes and 'string-selective' drain select gate electrodes in vertical NAND strings. Various embodiments may provide two or more vertical NAND strings sharing a common drain select gate electrode while also having separate additional drain select gate electrodes not electrically connected across the two or more vertical NAND strings.