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For the Inventor, By the Inventor

San Diego, CA, United States of America

Chang Ho Jung

This inventor holds 12 USPTO granted patents and 7 EPO patents. Top assignee: Qualcomm Incorporated. Active years: 2007-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang Ho Jung. Retrieved from https://idiyas.com/inventor/chang-ho-jung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 91.7

 

Average Co-Inventor Count = 1.9

ph-index = 6

Forward Citations = 138(Granted Patents)


Company Filing History:

goldMedal12 out of 44,897 
 
Qualcomm Incorporated
 patents

Years Active: 2007-2014

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12 patents (USPTO):Explore Patents
1. 8780658 - Leakage reduction in memory devices (2014-07-15),
2. 8570818 - Address multiplexing in pseudo-dual port memory (2013-10-29),
3. 8208316 - SRAM yield enhancement by read margin improvement (2012-06-26),
4. 8082401 - Self-timing for a multi-ported memory system (2011-12-20),
5. 7881147 - Clock and control signal generation for high performance memory devices (2011-02-01),
6. 7859920 - Advanced bit line tracking in high performance memory compilers (2010-12-28),
7. 7760562 - Address multiplexing in pseudo-dual port memory (2010-07-20),
8. 7656731 - Semi-shared sense amplifier and global read line architecture (2010-02-02),
9. 7646658 - Memory device with delay tracking for improved timing margin (2010-01-12),
10. 7499347 - Self-timing circuit with programmable delay and programmable accelerator circuits (2009-03-03),
11. 7319632 - Pseudo-dual port memory having a clock for each port (2008-01-15),
12. 7251193 - Pseudo-dual port memory where ratio of first to second memory access is clock duty cycle independent (2007-07-31),

Title: Chang Ho Jung: Innovator in Memory Device Technology

Introduction

Chang Ho Jung is a prominent inventor based in San Diego, CA, known for his significant contributions to memory device technology. With a total of 12 patents to his name, he has made remarkable advancements in reducing leakage current in memory devices, which is crucial for enhancing performance and efficiency.

Latest Patents

One of his latest patents focuses on leakage reduction in memory devices. This innovation involves a memory device that includes a core array with memory cells and a headswitch that disconnects the core array from the positive supply voltage, effectively reducing leakage current. Additionally, he has developed head switches for pre-charge devices to further minimize leakage. Another notable patent is for address multiplexing in pseudo-dual port memory. This system includes a control circuit that identifies read and write requests during a single clock cycle, along with a self-time tracking circuit that monitors read operations and generates a switching signal when the operation is complete.

Career Highlights

Chang Ho Jung is currently employed at Qualcomm Incorporated, a leading company in the telecommunications and semiconductor industry. His work at Qualcomm has positioned him as a key player in the development of advanced memory technologies.

Collaborations

Throughout his career, Chang has collaborated with talented individuals such as Zhiqin Chen and Nan Chen, contributing to the innovative environment at Qualcomm.

Conclusion

Chang Ho Jung's contributions to memory device technology through his patents and work at Qualcomm highlight his role as a significant inventor in the field. His innovations continue to impact the efficiency and performance of memory devices in modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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