The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2010

Filed:

Mar. 30, 2007
Applicants:

Chang Ho Jung, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Inventors:

Chang Ho Jung, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Assignee:

QUALCOMM, Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory includes a global read line and a plurality of banks. For each bank, the memory includes a sense amplifier. A discharge circuit discharges the global read line if any one of a plurality of the sense amplifiers is enabled and is outputting a signal having a first digital logic value onto an input lead of the discharge circuit. In this way, the sense amplifiers share the discharge circuit. In one example, the memory includes a pair of differential read lines that are precharged to begin a read operation. After precharging, if either of two sense amplifiers is enabled and outputting the first digital logic value, then a first discharge circuit discharges a first of the global read lines. If either of two sense amplifiers is enabled and outputting the second digital logic value, then a second discharge circuit discharges a second of the global read lines.


Find Patent Forward Citations

Loading…