The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Mar. 03, 2009
Applicants:
Chang Ho Jung, San Diego, CA (US);
Nan Chen, San Diego, CA (US);
Cheng Zhong, San Diego, CA (US);
Zhiqin Chen, San Diego, CA (US);
Inventors:
Chang Ho Jung, San Diego, CA (US);
Nan Chen, San Diego, CA (US);
Cheng Zhong, San Diego, CA (US);
Zhiqin Chen, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 5/14 (2006.01); G11C 11/4094 (2006.01); G11C 7/22 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
G11C 7/00 (2013.01); G11C 11/4094 (2013.01); G11C 7/22 (2013.01); H03K 19/0016 (2013.01);
Abstract
A memory device includes a core array that includes memory cells. The memory device also includes a headswitch coupled to the core array and a positive supply voltage. The headswitch reduces leakage current from the core array by disconnecting the core array from the positive supply voltage. Additionally, head switches are added for pre-charge devices to further reduce leakage current.