The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2012

Filed:

Aug. 19, 2008
Applicants:

Nan Chen, San Diego, CA (US);

Chang Jung, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Inventors:

Nan Chen, San Diego, CA (US);

Chang Jung, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A sense margin is improved for a read path in a memory array. Embodiments improve the sense margin by using gates with a lower threshold voltage in a read column multiplexer. A cross coupled keeper can further improve the sense margin by increasing a voltage level on a bit line storing a high value, thereby counteracting leakage on the 'high' bit line.


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