Chan Park

Title: Innovations of Inventor Chan Park

Introduction

Chan Park is a notable inventor based in Mountain View, CA (US). He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work primarily focuses on advancements in three-dimensional nonvolatile memory structures.

Latest Patents

One of Chan Park's latest patents is titled "Memory hole structure in three dimensional memory." This invention involves memory holes that extend vertically through two or more physical levels where memory cells are formed. The memory hole structures include vertical channels, and vertical trenches are formed to divide these structures into multiple vertical NAND strings. Another significant patent is "Blocking oxide in memory opening integration scheme for three-dimensional memory structure." This patent describes a process where an alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After creating a memory opening, all surfaces are treated to become silicon oxide surfaces, followed by the formation of a silicon nitride layer within the memory opening. This innovative approach minimizes damage to the outer layer of the memory stack structure through the use of etch stop structures.

Career Highlights

Chan Park is currently employed at Sandisk Technologies Inc., where he continues to push the boundaries of memory technology. His expertise and innovative mindset have led to the development of cutting-edge solutions in the industry.

Collaborations

Throughout his career, Chan has collaborated with talented individuals such as Tuan Duc Pham and Naoki Takeguchi, who contribute to the advancement of technology in their respective fields.

Conclusion

Chan Park's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the development of advanced memory solutions.