The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Oct. 03, 2014
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Chan Park, Mountain View, CA (US);

Jong Sun Sel, Los Gatoes, CA (US);

Tuan Pham, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01); H01L 27/11556 (2017.01); G11C 8/14 (2006.01); G11C 16/04 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 8/14 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); G11C 7/18 (2013.01);
Abstract

In a three dimensional nonvolatile memory, memory holes extend vertically through two or more physical levels in which memory cells are formed. Memory hole structures are formed in memory holes to include vertical channels. Vertical trenches are subsequently formed to divide memory hole structures into two or more vertical NAND strings.


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