The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jul. 25, 2014
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Jong Sun Sel, Los Gatos, CA (US);
Marika Gunji-Yoneoka, Sunnyvale, CA (US);
Naoki Takeguchi, Aichiken, JP;
Chan Park, Aichiken, JP;
Tuan D. Pham, San Jose, CA (US);
Kazuya Tokunaga, San Francisco, CA (US);
Assignee:
SanDisk Technologies Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 27/115 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76879 (2013.01); H01L 23/5222 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 23/53295 (2013.01); H01L 27/11529 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
Air gaps are formed between bit lines by etching to remove sacrificial material from between bit lines. Bit lines are protected from etch damage. Sacrificial material may be selectively oxidized prior to deposition of bit line metal so that protective oxide lies along sides of bit lines during etch. Portions of protective material may be selectively formed on tops of bit lines prior to etching sacrificial material.