Catania, Italy

Carmelo Magro


Average Co-Inventor Count = 2.5

ph-index = 4

Forward Citations = 40(Granted Patents)


Location History:

  • Catania Ct, IT (1992 - 1994)
  • Catania, IT (1990 - 2000)

Company Filing History:


Years Active: 1990-2000

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Carmelo Magro

Introduction

Carmelo Magro is a distinguished inventor based in Catania, Italy. He has made significant contributions to the field of microelectronics, particularly in the development of MOS transistors. With a total of 6 patents to his name, Magro's work has had a profound impact on the industry.

Latest Patents

Carmelo Magro's latest patents focus on MOS transistors having vertical current flow. The process he developed first accomplishes low-doping body regions at the sides and under a gate region. Following this, high-doping body regions are formed inside the low-doping body regions, self-aligned with the gate region. This innovative approach results in an MOS power transistor with vertical current flow, featuring high-doping body regions that are self-aligned with the gate region and possess a reduced junction depth.

Career Highlights

Throughout his career, Magro has worked with notable companies such as SGS-Thomson Microelectronics S.r.l. and Consorzio per la Ricerca sulla Microelettronica. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in microelectronics.

Collaborations

Carmelo Magro has collaborated with esteemed colleagues, including Paolo Lanza and Raffaele Zambrano. These partnerships have fostered a creative environment that has led to innovative solutions in the field.

Conclusion

Carmelo Magro's contributions to the field of microelectronics, particularly through his patents on MOS transistors, highlight his role as a key innovator. His work continues to influence the industry and inspire future advancements.

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