The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1994
Filed:
Oct. 13, 1992
Applicant:
Inventors:
Antonello Santangelo, Belpasso CT, IT;
Carmelo Magro, Catania CT, IT;
Guiseppe Ferla, Catania CT, IT;
Paolo Lanza, Cassaro SR, IT;
Assignee:
SGS-Thompson Microelectronics S.r.L., Milan, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437188 ; 437 20 ; 437187 ; 437247 ; 437918 ; 148D / ;
Abstract
A metal semiconductor ohmic contact farming process consists of enrichment of the surface of the semiconductor on which contact is to be formed, by ion implantation of a dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature lower than 500.degree. C. and for a period shorter than 60 minutes.