Antonello Santangelo

Title: Antonello Santangelo: Innovator in Semiconductor Technology

Introduction

Antonello Santangelo is a notable inventor based in Belpasso, CT, Italy. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to metallization processes.

Latest Patents

Santangelo's latest patents include a process for obtaining multi-layer metallization of the back of a semiconductor substrate. This process involves depositing a series of metal layers after ion implantation of dopants on the interface with the first layer. The ion implantation step is followed by the deposition of one or more metal layers, and then thermal annealing under vacuum or in an inert atmosphere at a temperature considerably lower than 500°C and for a period considerably shorter than 60 minutes. Another significant patent is the metal-semiconductor ohmic contact forming process. This process consists of enriching the surface of the semiconductor by ion implantation of a dopant, followed by the deposition of a metal film on the implanted surface and thermal annealing at a temperature lower than 500°C and for a period shorter than 60 minutes.

Career Highlights

Santangelo works at Sgs-thomson Microelectronics S.r.l., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Some of his notable coworkers include Paolo Lanza and Carmelo Magro, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Antonello Santangelo's contributions to semiconductor technology through his innovative patents highlight his role as a key figure in the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.