The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1994
Filed:
Jul. 09, 1993
Applicant:
Inventors:
Assignee:
SGS-Thomson Microelectronics, S.R.L., Agrate Brianza MI, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 25 ; 437192 ; 437245 ; 437247 ;
Abstract
The metallization of the back of the semiconductor substrate is obtained by depositing a series of metal layers, after ion implantation of dopant on the interface with the first layer. The step of ion implantation is followed by the deposition of one or more metal layers of the aforesaid series, and then by thermal annealing under vacuum or in an inert atmosphere, at a temperature considerably lower than 500.degree. C. and for a period considerably shorter than 60 minutes.
Santangelo, Antonello. (1994). Process for obtaining multi-layer metallization of the back of a (U.S. Patent No. 5342793). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5342793
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile