Saint Nazaire les Eymes, France

Carlos Mazuré


Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 79(Granted Patents)


Location History:

  • St. Nazaire les Eymes, FR (2005)
  • Saint Nazaire les Eymes, FR (2006 - 2007)

Company Filing History:


Years Active: 2005-2007

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3 patents (USPTO):Explore Patents

Title: Carlos Mazuré: Innovator in Semiconductor Technology

Introduction

Carlos Mazuré is a prominent inventor based in Saint Nazaire les Eymes, France. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on developing advanced semiconductor structures that enhance performance and reduce defects.

Latest Patents

Mazuré's latest patents include a semiconductor structure designed to provide a strained crystalline layer on an insulator. This innovative method fabricates a semiconductor structure with a high-strained crystalline layer that exhibits a low crystal defect density. The structure features a substrate made from germanium or a Group (III)-Group (V) semiconductor or its alloy. Additionally, it includes a crystalline epitaxial first layer, which consists of a graded buffer layer and a substantially relaxed layer. The buffer layer is engineered to be sufficiently relaxed, allowing for the relaxation of the layer deposited on it. Furthermore, a weakened zone in the first layer facilitates the transfer of additional layers, enhancing the overall functionality of the semiconductor structure.

Career Highlights

Carlos Mazuré is currently employed at S.O.I. Tec Silicon on Insulator Technologies, S.A. His role at the company allows him to apply his expertise in semiconductor technology and contribute to cutting-edge innovations in the field.

Collaborations

Mazuré has collaborated with notable colleagues, including Cécile Aulnette and Frédéric Dupont. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor research.

Conclusion

Carlos Mazuré is a key figure in semiconductor innovation, with a focus on developing structures that improve performance and reduce defects. His contributions to the field are significant, and his work continues to influence advancements in semiconductor technology.

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