The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Nov. 12, 2003
Bruno Ghyselen, Seyssinet, FR;
Oliver Rayssac, Grenoble, FR;
Cécile Aulnette, Grenoble, FR;
Carlos Mazuré, St. Nazaire les Eymes, FR;
Bruno Ghyselen, Seyssinet, FR;
Oliver Rayssac, Grenoble, FR;
Cécile Aulnette, Grenoble, FR;
Carlos Mazuré, St. Nazaire les Eymes, FR;
S.O.I.Tec Silicon on Insulator Technologies S.A., Bernin, FR;
Abstract
A semiconductor structure and methods for fabricating are disclosed. In an implementation, a method of fabricating a semiconductor structure includes forming a first semiconductor material substrate with a first dielectric area having a first thickness and a second dielectric area having a second thickness, bonding the first substrate to a second semiconductor substrate, and thinning at least one of the first and second substrates. The invention also pertains to a semiconductor structure. The structure includes a semiconductor substrate having a surface layer of semiconductor material, a first dielectric layer of a first dielectric material buried under the surface layer, and a second dielectric layer buried under the surface layer. In an embodiment, the thickness of the first dielectric layer is different than the thickness of the second dielectric layer.