S.o.i. Tec Silicon on Insulator Technologies, S.a.

Carlos Mazuré

Cécile Aulnette

Frédéric Dupont

Bruno Ghyselen

Oliver Rayssac

A method for fabricating a semiconductor structure having a high-strained crystalline layer with a low crystal defect density is disclosed. The structure includes a substrate having a first material comprising germanium or a Group(III)-Group(V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.

Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same

A semiconductor structure having a high-strained crystalline layer with a low crystal defect density and a method for fabricating such a semiconductor structure are disclosed. The structure includes a substrate having a first material comprising germanium or a Group (III)&#x2013;Group (V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.

A semiconductor structure and methods for fabricating are disclosed. In an implementation, a method of fabricating a semiconductor structure includes forming a first semiconductor material substrate with a first dielectric area having a first thickness and a second dielectric area having a second thickness, bonding the first substrate to a second semiconductor substrate, and thinning at least one of the first and second substrates. The invention also pertains to a semiconductor structure. The structure includes a semiconductor substrate having a surface layer of semiconductor material, a first dielectric layer of a first dielectric material buried under the surface layer, and a second dielectric layer buried under the surface layer. In an embodiment, the thickness of the first dielectric layer is different than the thickness of the second dielectric layer.

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Saint Nazaire les Eymes, France

Carlos Mazuré