Suwon, South Korea

Byungsun Park

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byungsun Park. Retrieved from https://idiyas.com/inventor/byungsun-park-qdvshdv5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 5.9

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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3 patents (USPTO):Explore Patents

Title: Byungsun Park: Innovator in Semiconductor Technology

Introduction

Byungsun Park is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of nonvolatile memory devices.

Latest Patents

One of his latest patents is titled "Semiconductor device having doped interlayer insulating layer." This invention includes a lower memory stack disposed on a substrate, featuring lower gate electrodes and a lower staircase structure. It also comprises an upper memory stack with upper gate electrodes and an upper staircase structure. The device incorporates a lower interlayer insulating layer doped with an impurity, which covers the lower staircase structure, and an upper interlayer insulating layer that also has a doping concentration gradually increasing toward the upper staircase structure. Additionally, the device includes lower and upper contact plugs that connect to the respective gate electrodes.

Another notable patent is "Nonvolatile memory devices comprising a conductive line comprising portions having different profiles and methods of fabricating the same." This invention provides nonvolatile memory devices that include a stacked structure of conductive films and interlayer insulating films arranged in an alternating sequence on a substrate. The vertical channel structure extends through this stacked arrangement, and the selection line, which is closest to the substrate, consists of a lower and an upper portion that are sequentially stacked.

Career Highlights

Byungsun Park is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Throughout his career, Byungsun has collaborated with talented individuals such as Jiwoon Im and Taeyong Eom. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Byungsun Park is a key figure in the semiconductor industry, with a focus on developing advanced memory devices. His innovative patents reflect his commitment to enhancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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