The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
May. 29, 2018
Taeyong Eom, Anyang-si, KR;
Jiwoon Im, Hwaseong-si, KR;
Byungsun Park, Suwon-si, KR;
Hyunseok Lim, Suwon-si, KR;
Yu Seon Kang, Hwaseong-si, KR;
Hyukho Kwon, Hwaseong-si, KR;
Sungjin Park, Seongnam-si, KR;
Jiyoun Seo, Seoul, KR;
Dong Hyeop Ha, Daegu, KR;
Taeyong Eom, Anyang-si, KR;
Jiwoon Im, Hwaseong-si, KR;
Byungsun Park, Suwon-si, KR;
Hyunseok Lim, Suwon-si, KR;
Yu Seon Kang, Hwaseong-si, KR;
Hyukho Kwon, Hwaseong-si, KR;
Sungjin Park, Seongnam-si, KR;
Jiyoun Seo, Seoul, KR;
Dong Hyeop Ha, Daegu, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.